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Kingston ACR256X64D3S1333C9 2GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
比较
Kingston ACR256X64D3S1333C9 2GB vs Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
28
左右 4% 更低的延时
需要考虑的原因
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
报告一个错误
更快的读取速度,GB/s
18.2
11.9
测试中的平均数值
更快的写入速度,GB/s
13.6
8.5
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
28
读取速度,GB/s
11.9
18.2
写入速度,GB/s
8.5
13.6
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1620
3143
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB RAM的比较
TwinMOS 8DPT5MK8-TATP 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3000C14-16GTZ 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Samsung M471A5244CB0-CTD 4GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-2400C16-8GFT 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4DFD824A.C16FDD2 8GB
Corsair CMX8GX3M2A1600C11 4GB
Essencore Limited IM44GU48N24-FFFHAB 4GB
SK Hynix HYMP125U64CP8-S6 2GB
Corsair CMK32GX4M2B3000C15 16GB
Kingston 99U5474-013.A00LF 2GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CMSX8GX4M1A2666C18 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Kingston 9905630-007.A00G 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Avant Technology W6451U66J9266ND 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C19-16GTRG 16GB
A-DATA Technology DDR4 2666 8GB
Samsung M471A2K43CB1-CRCR 16GB
报告一个错误
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Bug description
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