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Kingston HP669238-071-HYC 4GB
Golden Empire CL18-20-20 D4-3000 8GB

Kingston HP669238-071-HYC 4GB vs Golden Empire CL18-20-20 D4-3000 8GB

总分
star star star star star
Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

总分
star star star star star
Golden Empire CL18-20-20 D4-3000 8GB

Golden Empire CL18-20-20 D4-3000 8GB

差异 规格 评论

差异

Kingston HP669238-071-HYC 4GB 需要考虑的原因
Kingston HP669238-071-HYC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 29
    左右 14% 更低的延时
Golden Empire CL18-20-20 D4-3000 8GB 需要考虑的原因
Golden Empire CL18-20-20 D4-3000 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.9 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 5.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston HP669238-071-HYC 4GB
Golden Empire CL18-20-20 D4-3000 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 29
  • 读取速度，GB/s
    11.3 left arrow 16.9
  • 写入速度，GB/s
    5.5 left arrow 12.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1913 left arrow 3208

Kingston HP669238-071-HYC 4GB RAM的比较

Kingston HP698650-154-KEB 4GB
Kingston 9905584-037.A00LF 4GB

Golden Empire CL18-20-20 D4-3000 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD R5316G1609U2K 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMW64GX4M4E3200C16 16GB
Corsair CMW64GX4M4E3200C16 16GB
内存RAM
Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
Golden Empire CL18-20-20 D4-3000 8GB
Golden Empire CL18-20-20 D4-3000 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
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Essencore Limited KD48GU880-36A180U 8GB
Essencore Limited KD48GU880-36A180U 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
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内存RAM
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Samsung M393A4K40CB1-CRC 32GB
内存RAM
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Crucial Technology CT8G4SFD8213.C16FBD1 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMH16GX4M2Z3200C16 8GB
Corsair CMH16GX4M2Z3200C16 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-2133C15-8GFT 8GB
G Skill Intl F4-2133C15-8GFT 8GB
内存RAM
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Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
内存RAM
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Samsung M378B5173BH0-CH9 4GB
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Mushkin MR[ABC]4U360JNNM16G 16GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
SK Hynix HMA41GR7MFR8N-TF 8GB
SK Hynix HMA41GR7MFR8N-TF 8GB
内存RAM