Kingston HP669238-071-HYC 4GB vs Kingston ASU21D4U5S8MB-8 8GB

总分

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

总分

Kingston ASU21D4U5S8MB-8 8GB

Kingston ASU21D4U5S8MB-8 8GB

差异规格评论

差异

Kingston HP669238-071-HYC 4GB

需要考虑的原因
Kingston HP669238-071-HYC 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 17% 更低的延时

Kingston ASU21D4U5S8MB-8 8GB

需要考虑的原因
Kingston ASU21D4U5S8MB-8 8GB

报告一个错误

更快的读取速度，GB/s

16.3 11.3

测试中的平均数值
更快的写入速度，GB/s

11.4 5.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston HP669238-071-HYC 4GB

Kingston ASU21D4U5S8MB-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 30
读取速度，GB/s

11.3 16.3
写入速度，GB/s

5.5 11.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1913 2953

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS824A.M8FGM 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-3200C16-8GVR 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

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G Skill Intl F4-4400C19-32GTRS 32GB

Essencore Limited KD48GU88C-26N1600 8GB

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Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Crucial Technology CB8GU2400.C8JT 8GB

Crucial Technology CB8GU2400.C8JT 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

Kingston KHX2933C17D4/16G 16GB

Kingston KHX2933C17D4/16G 16GB