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Kingston HX316C10F/8 8GB
Corsair CMW16GX4M2Z4600C18 8GB

Kingston HX316C10F/8 8GB vs Corsair CMW16GX4M2Z4600C18 8GB

总分
star star star star star
Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

总分
star star star star star
Corsair CMW16GX4M2Z4600C18 8GB

Corsair CMW16GX4M2Z4600C18 8GB

差异 规格 评论

差异

Kingston HX316C10F/8 8GB 需要考虑的原因
Kingston HX316C10F/8 8GB
报告一个错误
Corsair CMW16GX4M2Z4600C18 8GB 需要考虑的原因
Corsair CMW16GX4M2Z4600C18 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 36
    左右 -24% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston HX316C10F/8 8GB
Corsair CMW16GX4M2Z4600C18 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 29
  • 读取速度，GB/s
    14.7 left arrow 16.9
  • 写入速度，GB/s
    9.2 left arrow 13.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2585 left arrow 3285

Kingston HX316C10F/8 8GB RAM的比较

Smart Modular SH5641G8FJ8NWRNSQG 8GB
Avant Technology F6451U66G1600G 4GB

Corsair CMW16GX4M2Z4600C18 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Gold Key Technology Co Ltd NMSO480E85-2666E 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
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Samsung M471A2K43DB1-CWE 16GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Corsair CMG16GX4M2E3200C16 8GB
Corsair CMG16GX4M2E3200C16 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-3200C14-8GFX 8GB
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内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
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内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
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Essencore Limited IM48GU48A32-GIISMZ 8GB
内存RAM
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Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingston 9965596-031.B00G 8GB
Kingston 9965596-031.B00G 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Kingston 9965639-002.A01G 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BL32G36C16U4B.M16FB1 32GB
Crucial Technology BL32G36C16U4B.M16FB1 32GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Samsung M386A8K40BMB-CPB 64GB
Samsung M386A8K40BMB-CPB 64GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Kingston 9965589-031.D01G 2GB
Kingston 9965589-031.D01G 2GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Avant Technology W642GU42J5213N2 16GB
Avant Technology W642GU42J5213N2 16GB
内存RAM