Kingston HX316C10F/8 8GB vs G Skill Intl F4-3333C16-8GTZSW 8GB

总分

Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

总分

G Skill Intl F4-3333C16-8GTZSW 8GB

G Skill Intl F4-3333C16-8GTZSW 8GB

差异规格评论

差异

Kingston HX316C10F/8 8GB

需要考虑的原因
Kingston HX316C10F/8 8GB

报告一个错误

G Skill Intl F4-3333C16-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-3333C16-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 36

左右 -50% 更低的延时
更快的读取速度，GB/s

15.1 14.7

测试中的平均数值
更快的写入速度，GB/s

11.1 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston HX316C10F/8 8GB

G Skill Intl F4-3333C16-8GTZSW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 24
读取速度，GB/s

14.7 15.1
写入速度，GB/s

9.2 11.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2585 3045

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905403-447.A00LF 4GB

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Micron Technology M471A1K43BB1-CRC 8GB

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Corsair CMK32GX4M4B3000C15 8GB

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Corsair CMK32GX4M4C3400C16 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

SK Hynix HMA84GL7MMR4N-TF 32GB

SK Hynix HMA84GL7MMR4N-TF 32GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

G Skill Intl F4-3600C19-8GSXKB 8GB

G Skill Intl F4-3600C19-8GSXKB 8GB