Kingston HX318C10FK/4 4GB vs Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

总分

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

总分

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

差异规格评论

差异

Kingston HX318C10FK/4 4GB

需要考虑的原因
Kingston HX318C10FK/4 4GB

报告一个错误

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 69

左右 -214% 更低的延时
更快的读取速度，GB/s

17.3 6.1

测试中的平均数值
更快的写入速度，GB/s

13.7 4.1

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Kingston HX318C10FK/4 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

69 22
读取速度，GB/s

6.1 17.3
写入速度，GB/s

4.1 13.7
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1116 3051

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMY8GX3M2A2133C8 4GB

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Kingston 99U5428-063.A00LF 8GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

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Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

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AMD R5S38G1601U2S 8GB

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Corsair CMT32GX4M4K4000C19 8GB