Kingston HX318C10FK/4 4GB vs Century Micro Inc. CENTURY JAPAN MEMORY 8GB

总分

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

总分

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

差异规格评论

差异

Kingston HX318C10FK/4 4GB

需要考虑的原因
Kingston HX318C10FK/4 4GB

报告一个错误

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

需要考虑的原因
Century Micro Inc. CENTURY JAPAN MEMORY 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 69

左右 -92% 更低的延时
更快的读取速度，GB/s

16 6.1

测试中的平均数值
更快的写入速度，GB/s

13.2 4.1

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Kingston HX318C10FK/4 4GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

69 36
读取速度，GB/s

6.1 16.0
写入速度，GB/s

4.1 13.2
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1116 3313

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT41GU7BFR8A-PB 8GB

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Crucial Technology BLS8G4D30AESCK.M8FE 8GB

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Kingston KF552C40-16 16GB

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Chun Well Technology Holding Limited D4U0830160B 8GB

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Century Micro Inc. CENTURY JAPAN MEMORY 8GB

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Ramaxel Technology RMSA3260MH78H8H-2666 8GB

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Samsung M471B5273EB0-CK0 4GB

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SK Hynix HYMP112U64CP8-S5 1GB

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G Skill Intl F4-3200C15-16GTZ 16GB

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Kingston 9965684-005.A00G 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

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Samsung M378B5773DH0-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N