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Kingston HX318C10FK/4 4GB
G Skill Intl F4-2133C15-4GRS 4GB

Kingston HX318C10FK/4 4GB vs G Skill Intl F4-2133C15-4GRS 4GB

总分
star star star star star
Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

总分
star star star star star
G Skill Intl F4-2133C15-4GRS 4GB

G Skill Intl F4-2133C15-4GRS 4GB

差异 规格 评论

差异

Kingston HX318C10FK/4 4GB 需要考虑的原因
Kingston HX318C10FK/4 4GB
报告一个错误
G Skill Intl F4-2133C15-4GRS 4GB 需要考虑的原因
G Skill Intl F4-2133C15-4GRS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 69
    左右 -109% 更低的延时
  • 更快的读取速度，GB/s
    15.9 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 4.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 14900
    左右 1.14 更高的带宽

规格

完整的技术规格清单
Kingston HX318C10FK/4 4GB
G Skill Intl F4-2133C15-4GRS 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 33
  • 读取速度，GB/s
    6.1 left arrow 15.9
  • 写入速度，GB/s
    4.1 left arrow 11.8
  • 内存带宽，mbps
    14900 left arrow 17000
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1116 left arrow 2601

Kingston HX318C10FK/4 4GB RAM的比较

Samsung M378B5173BH0-CH9 4GB
Kingston KHX1866C10D3/4G 4GB

G Skill Intl F4-2133C15-4GRS 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-2400C15-8GTZRX 8GB
G Skill Intl F4-2400C15-8GTZRX 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
G Skill Intl F4-4000C14-8GTZR 8GB
G Skill Intl F4-4000C14-8GTZR 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3000C16-16GTZR 16GB
G Skill Intl F4-3000C16-16GTZR 16GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Corsair CMR16GX4M2F4000C19 8GB
Corsair CMR16GX4M2F4000C19 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Cortus SAS 8ATF1G64AZ-2G6E1 8GB
Cortus SAS 8ATF1G64AZ-2G6E1 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Transcend Information TS512MSH64V1H 4GB
Transcend Information TS512MSH64V1H 4GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
G Skill Intl F4-2133C15-4GRS 4GB
G Skill Intl F4-2133C15-4GRS 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Apacer Technology 78.BAGNF.40C0B 4GB
Apacer Technology 78.BAGNF.40C0B 4GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Crucial Technology BLS8G4D30BESBK.8FD 8GB
Crucial Technology BLS8G4D30BESBK.8FD 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
内存RAM