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Kingston HX426C16FB2/8-SP 8GB
Corsair CMK8GX4M1A2400C14 8GB

Kingston HX426C16FB2/8-SP 8GB vs Corsair CMK8GX4M1A2400C14 8GB

总分
star star star star star
Kingston HX426C16FB2/8-SP 8GB

Kingston HX426C16FB2/8-SP 8GB

总分
star star star star star
Corsair CMK8GX4M1A2400C14 8GB

Corsair CMK8GX4M1A2400C14 8GB

差异 规格 评论

差异

Kingston HX426C16FB2/8-SP 8GB 需要考虑的原因
Kingston HX426C16FB2/8-SP 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
Corsair CMK8GX4M1A2400C14 8GB 需要考虑的原因
Corsair CMK8GX4M1A2400C14 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 50
    左右 -52% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 7.8
    测试中的平均数值

规格

完整的技术规格清单
Kingston HX426C16FB2/8-SP 8GB
Corsair CMK8GX4M1A2400C14 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 33
  • 读取速度，GB/s
    10.0 left arrow 15.6
  • 写入速度，GB/s
    7.8 left arrow 11.0
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2159 left arrow 2855

Kingston HX426C16FB2/8-SP 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMK8GX4M1A2400C14 8GB RAM的比较

Samsung M393B5170FH0-CK0 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK16GX4M2Z3466C16 8GB
Corsair CMK16GX4M2Z3466C16 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3000C15-8GVR 8GB
G Skill Intl F4-3000C15-8GVR 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C15-8GTRS 8GB
G Skill Intl F4-4000C15-8GTRS 8GB
内存RAM
Crucial Technology CT51264BA160B.C16F 4GB
Crucial Technology CT51264BA160B.C16F 4GB
G Skill Intl F4-2133C15-4GVR 4GB
G Skill Intl F4-2133C15-4GVR 4GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-3000C15-8GRBB 8GB
G Skill Intl F4-3000C15-8GRBB 8GB
内存RAM
Apacer Technology 78.C1GET.9K10C 8GB
Apacer Technology 78.C1GET.9K10C 8GB
SK Hynix HMA41GU7AFR8N-TF 8GB
SK Hynix HMA41GU7AFR8N-TF 8GB
内存RAM
Corsair CM3X8GA1600C10V2 8GB
Corsair CM3X8GA1600C10V2 8GB
Samsung M378A2G43AB3-CWE 16GB
Samsung M378A2G43AB3-CWE 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
内存RAM