Kingston K1N7HK-ELC 2GB vs Crucial Technology BLS4G4D26BFSB.8FD2 4GB

总分

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

总分

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

差异规格评论

差异

Kingston K1N7HK-ELC 2GB

需要考虑的原因
Kingston K1N7HK-ELC 2GB

报告一个错误

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FD2 4GB

报告一个错误

低于PassMark测试中的延时，ns

18 26

左右 -44% 更低的延时
更快的读取速度，GB/s

21.1 12.6

测试中的平均数值
更快的写入速度，GB/s

16.7 7.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston K1N7HK-ELC 2GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 18
读取速度，GB/s

12.6 21.1
写入速度，GB/s

7.7 16.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1820 3286

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 36ASF4G72PZ-2G3A1 32GB

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A-DATA Technology ADOVE1A0834E 1GB

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G Skill Intl F4-2133C15-16GIS 16GB

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Smart Modular SF4641G8CK8I8GKSBG 8GB

Smart Modular SF4641G8CK8I8GKSBG 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Samsung M471A1G43EB1-CRC 8GB

Samsung M471A1G43EB1-CRC 8GB

Golden Empire 2GB DDR2 800 CAS=4 2GB

Golden Empire 2GB DDR2 800 CAS=4 2GB

Corsair CMW16GX4M2K4000C19 8GB

Corsair CMW16GX4M2K4000C19 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB

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Kingston 99U5403-036.A00G 4GB

Kingston 9905711-002.A00G 4GB

Kingston 9905711-002.A00G 4GB