Kingston K1N7HK-ELC 2GB vs G Skill Intl F4-3600C19-8GSXKB 8GB

总分

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

总分

G Skill Intl F4-3600C19-8GSXKB 8GB

G Skill Intl F4-3600C19-8GSXKB 8GB

差异规格评论

差异

Kingston K1N7HK-ELC 2GB

需要考虑的原因
Kingston K1N7HK-ELC 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 7% 更低的延时

G Skill Intl F4-3600C19-8GSXKB 8GB

需要考虑的原因
G Skill Intl F4-3600C19-8GSXKB 8GB

报告一个错误

更快的读取速度，GB/s

18.6 12.6

测试中的平均数值
更快的写入速度，GB/s

15.4 7.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston K1N7HK-ELC 2GB

G Skill Intl F4-3600C19-8GSXKB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 28
读取速度，GB/s

12.6 18.6
写入速度，GB/s

7.7 15.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1820 3519

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL4G24C16U4B.8FB 4GB

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Samsung M378B5673EH1-CF8 2GB

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Micron Technology 8ATF1G64AZ-2G6H1 8GB

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Corsair CMZ16GX3M2A1866C9 8GB

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Kingston 9905403-134.A00LF 2GB

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AMD R5316G1609U2K 8GB

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Crucial Technology CT8G4DFD824A.M16FF 8GB

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Samsung M393B5170FH0-CK0 4GB

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SK Hynix HMA82GR7AFR8N-VK 16GB

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Kingmax Semiconductor GLLG42F-18---------- 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

G Skill Intl F4-3600C19-8GSXKB 8GB

G Skill Intl F4-3600C19-8GSXKB 8GB

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

Corsair CMK8GX4M2B3600C18 4GB

Corsair CMK8GX4M2B3600C18 4GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-2800C15-4GVRB 4GB

G Skill Intl F4-2800C15-4GVRB 4GB