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Kingston K1N7HK-ELC 2GB
G Skill Intl F4-4266C19-8GTZSW 8GB

Kingston K1N7HK-ELC 2GB vs G Skill Intl F4-4266C19-8GTZSW 8GB

总分
star star star star star
Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

总分
star star star star star
G Skill Intl F4-4266C19-8GTZSW 8GB

G Skill Intl F4-4266C19-8GTZSW 8GB

差异 规格 评论

差异

Kingston K1N7HK-ELC 2GB 需要考虑的原因
Kingston K1N7HK-ELC 2GB
报告一个错误
G Skill Intl F4-4266C19-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-4266C19-8GTZSW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 26
    左右 -53% 更低的延时
  • 更快的读取速度，GB/s
    22.1 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.0 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston K1N7HK-ELC 2GB
G Skill Intl F4-4266C19-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 17
  • 读取速度，GB/s
    12.6 left arrow 22.1
  • 写入速度，GB/s
    7.7 left arrow 18.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1820 left arrow 3847

Kingston K1N7HK-ELC 2GB RAM的比较

SK Hynix HMA41GR7AFR4N-UH 8GB
Hewlett-Packard 7EH55AA# 8GB

G Skill Intl F4-4266C19-8GTZSW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
G Skill Intl F4-4266C19-8GTZSW 8GB
G Skill Intl F4-4266C19-8GTZSW 8GB
内存RAM
Samsung M471B1G73EB0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
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内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M393A2G40EB1-CRC 16GB
Samsung M393A2G40EB1-CRC 16GB
内存RAM
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A2K43BB1-CPB 16GB
Samsung M471A2K43BB1-CPB 16GB
内存RAM
SK Hynix HMT41GS6BFR8A-PB 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
Netac Technology Co Ltd E40832A 8GB
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内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
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InnoDisk Corporation M4S0-8GSSOCIK 8GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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G Skill Intl F4-2400C17-4GNT 4GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
InnoDisk Corporation M4S0-8GSSOCRG 8GB
InnoDisk Corporation M4S0-8GSSOCRG 8GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Kingston XRMWRN-HYA 16GB
Kingston XRMWRN-HYA 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
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Kingston X74R9W-MIE 8GB
内存RAM
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Kingston 9905471-002.A00LF 2GB
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Kingston 9905665-017.A00G 4GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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A-DATA Technology AO1P32NCSV1-BDBS 16GB
内存RAM