Kingston K1N7HK-ELC 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

总分

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

差异规格评论

差异

Kingston K1N7HK-ELC 2GB

需要考虑的原因
Kingston K1N7HK-ELC 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 36

左右 28% 更低的延时
更快的读取速度，GB/s

12.6 9.1

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

报告一个错误

更快的写入速度，GB/s

7.9 7.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston K1N7HK-ELC 2GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 36
读取速度，GB/s

12.6 9.1
写入速度，GB/s

7.7 7.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 13 15 18 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1820 2090

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMT64GX4M4K3600C16 16GB

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Kingston K1N7HK-ELC 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

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Kingston KHX2933C17S4/8G 8GB

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Kingston 99U5458-008.A00LF 4GB

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Kingston 9905624-009.A00G 8GB

Kingmax Semiconductor FLFF65F-C8KM9 4GB

Kingmax Semiconductor FLFF65F-C8KM9 4GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Samsung M3 78T2863QZS-CF7 1GB

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Corsair CMR64GX4M8C3000C15 8GB

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Samsung M393B1G70QH0-YK0 8GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB