Kingston K1N7HK-ELC 2GB vs Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB

总分

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

总分

Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB

Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB

差异规格评论

差异

Kingston K1N7HK-ELC 2GB

需要考虑的原因
Kingston K1N7HK-ELC 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 31

左右 16% 更低的延时

Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB

需要考虑的原因
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB

报告一个错误

更快的读取速度，GB/s

21.2 12.6

测试中的平均数值
更快的写入速度，GB/s

15.4 7.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston K1N7HK-ELC 2GB

Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 31
读取速度，GB/s

12.6 21.2
写入速度，GB/s

7.7 15.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1820 3486

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A1K1KBB1-CRC 8GB

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Kingston 9905471-002.A00LF 2GB

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Kingston K1N7HK-ELC 2GB

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Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Crucial Technology BLS4G4D26BFSE.8FE 4GB

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PNY Electronics PNY 2GB

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Corsair CMK8GX4M2B3733C17 4GB

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Kingston KVR800D2N6/2G 2GB

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Corsair CMR64GX4M8C3000C15 8GB

Corsair CMR64GX4M8C3000C15 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

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Kingston K531R8-MIN 4GB

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Kingston KHX4800C19D4/8GX 8GB

Kingston KHX4800C19D4/8GX 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

Crucial Technology CT8G4DFD824A.M16FE 8GB

Crucial Technology CT8G4DFD824A.M16FE 8GB