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Kingston K1N7HK-HYC 2GB
Kingston KVR16N11/8-SP 8GB
比较
Kingston K1N7HK-HYC 2GB vs Kingston KVR16N11/8-SP 8GB
总分
Kingston K1N7HK-HYC 2GB
总分
Kingston KVR16N11/8-SP 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston K1N7HK-HYC 2GB
报告一个错误
需要考虑的原因
Kingston KVR16N11/8-SP 8GB
报告一个错误
更快的读取速度,GB/s
13.9
12.2
测试中的平均数值
更快的写入速度,GB/s
9.5
7.8
测试中的平均数值
更高的内存带宽,mbps
12800
10600
左右 1.21 更高的带宽
规格
完整的技术规格清单
Kingston K1N7HK-HYC 2GB
Kingston KVR16N11/8-SP 8GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
26
26
读取速度,GB/s
12.2
13.9
写入速度,GB/s
7.8
9.5
内存带宽,mbps
10600
12800
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度
7-7-7-20 / 1333 MHz
9-9-9-24 / 1600 MHz
排名PassMark (越多越好)
1809
2432
Kingston K1N7HK-HYC 2GB RAM的比较
Kingston 99U5712-002.A00G 16GB
Kingston KVR16N11/8-SP 8GB RAM的比较
Kingston HP32D4S2S1ME-4 4GB
Kingston HX316C10F/4 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B2G70BH0-CK0 16GB
Hewlett-Packard 7EH68AA# 16GB
Kingston K1N7HK-HYC 2GB
Kingston KVR16N11/8-SP 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMR32GX4M2C3000C16 16GB
Kingston 39P5429-006.AO01 2GB
Essencore Limited IM48GU48N28-GGGHM 8GB
SK Hynix HMT42GR7AFR4C-RD 16GB
G Skill Intl F4-2400C16-16GRS 16GB
Corsair CM2X2048-6400C5 2GB
Transcend Information TS2GSH64V1B 16GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMAA4GU6AJR8N-XN 32GB
PNY Electronics PNY 2GB
Samsung M471A2G43BB2-CWE 16GB
Mushkin 996902 2GB
Corsair CMD8GX4M2B3866C18 4GB
SK Hynix HMT41GU7BFR8A-PB 8GB
G Skill Intl F4-2666C15-8GVR 8GB
Corsair CML8GX3M2A1866C9 4GB
Avant Technology W641GU42J9266NC 8GB
Samsung M393A1G40DB0-CPB 8GB
Kingston 9905702-082.A00G 8GB
Samsung M393B1K70CH0-CH9 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
报告一个错误
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Bug description
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