RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston KF552C40-16 16GB
Gloway International (HK) STK4U2400D17081C 8GB

Kingston KF552C40-16 16GB vs Gloway International (HK) STK4U2400D17081C 8GB

总分
star star star star star
Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

总分
star star star star star
Gloway International (HK) STK4U2400D17081C 8GB

Gloway International (HK) STK4U2400D17081C 8GB

差异 规格 评论

差异

Kingston KF552C40-16 16GB 需要考虑的原因
Kingston KF552C40-16 16GB
报告一个错误
  • 更快的写入速度，GB/s
    13.2 left arrow 12.5
    测试中的平均数值
Gloway International (HK) STK4U2400D17081C 8GB 需要考虑的原因
Gloway International (HK) STK4U2400D17081C 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 30
    左右 -30% 更低的延时
  • 更快的读取速度，GB/s
    17.1 left arrow 15.5
    测试中的平均数值

规格

完整的技术规格清单
Kingston KF552C40-16 16GB
Gloway International (HK) STK4U2400D17081C 8GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 23
  • 读取速度，GB/s
    15.5 left arrow 17.1
  • 写入速度，GB/s
    13.2 left arrow 12.5
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3343 left arrow 2960

Kingston KF552C40-16 16GB RAM的比较

Kingston KF560C40-16 16GB
G Skill Intl F4-3000C15-8GRK 8GB

Gloway International (HK) STK4U2400D17081C 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Kingston 99U5701-003.A00G 16GB
Kingston 99U5701-003.A00G 16GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Gloway International (HK) STK4U2400D17081C 8GB
Gloway International (HK) STK4U2400D17081C 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Kingston ACR26D4S9D8MD-16 16GB
Kingston ACR26D4S9D8MD-16 16GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
INTENSO GKE800UD102408-2133 8GB
INTENSO GKE800UD102408-2133 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMD16GX4M4B3200C15 4GB
Corsair CMD16GX4M4B3200C15 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CM4X4GD3000C16K2 4GB
Corsair CM4X4GD3000C16K2 4GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Kllisre M471A3243BB0-CP50 16GB
Kllisre M471A3243BB0-CP50 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology 76.D305G.D060B 16GB
Apacer Technology 76.D305G.D060B 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
内存RAM