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Kingston KF552C40-16 16GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
比较
Kingston KF552C40-16 16GB vs Micron Technology 16ATF2G64AZ-3G2E1 16GB
总分
Kingston KF552C40-16 16GB
总分
Micron Technology 16ATF2G64AZ-3G2E1 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston KF552C40-16 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
36
左右 17% 更低的延时
需要考虑的原因
Micron Technology 16ATF2G64AZ-3G2E1 16GB
报告一个错误
更快的读取速度,GB/s
18.6
15.5
测试中的平均数值
更快的写入速度,GB/s
15.3
13.2
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33 更高的带宽
规格
完整的技术规格清单
Kingston KF552C40-16 16GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
主要特点
存储器类型
DDR5
DDR4
PassMark中的延时,ns
30
36
读取速度,GB/s
15.5
18.6
写入速度,GB/s
13.2
15.3
内存带宽,mbps
19200
25600
Other
描述
PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
no data / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
3343
3372
Kingston KF552C40-16 16GB RAM的比较
Kingston KF560C40-16 16GB
G Skill Intl F4-3000C15-8GRK 8GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-2666C18-8GFX 8GB
Kingston 9905471-071.A00LF 8GB
Kingston KHX2933C17S4/16G 16GB
Kingston 9965433-034.A00LF 4GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Kingston 99P5474-037.A00LF 4GB
Essencore Limited IM4AGS88N24-FFFHA0 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Samsung M393A2K40BB1-CRC 16GB
Kingston 99U5474-022.A00LF 2GB
Corsair CMH128GX4M4E3200C16 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Super Talent F21UB8GS 8GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Samsung M378A4G43AB2-CVF 32GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Essencore Limited IM44GU48N21-FFFHM 4GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-4266C17-8GTZR 8GB
Samsung M3 93T5750CZA-CE6 2GB
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Kingston 99U5403-050.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
报告一个错误
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Bug description
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