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Kingston KF552C40-16 16GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Kingston KF552C40-16 16GB vs Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

总分
star star star star star
Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

总分
star star star star star
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

差异 规格 评论

差异

Kingston KF552C40-16 16GB 需要考虑的原因
Kingston KF552C40-16 16GB
报告一个错误
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB 需要考虑的原因
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 30
    左右 -30% 更低的延时
  • 更快的读取速度，GB/s
    19.6 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.8 left arrow 13.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11 更高的带宽

规格

完整的技术规格清单
Kingston KF552C40-16 16GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 23
  • 读取速度，GB/s
    15.5 left arrow 19.6
  • 写入速度，GB/s
    13.2 left arrow 18.8
  • 内存带宽，mbps
    19200 left arrow 21300
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    no data / 2400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3343 left arrow 4095

Kingston KF552C40-16 16GB RAM的比较

Kingston KF560C40-16 16GB
G Skill Intl F4-3000C15-8GRK 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C19-16GSXKB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
G Skill Intl F4-3200C15-16GTZR 16GB
G Skill Intl F4-3200C15-16GTZR 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
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Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
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Kingston CBD26D4U9S8ME-8 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
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内存RAM
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Kingston 9905471-006.A01LF 4GB
V-Color Technology Inc. TA48G36S818BNK 8GB
V-Color Technology Inc. TA48G36S818BNK 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Apacer Technology 78.CAGPE.AUF0B 8GB
Apacer Technology 78.CAGPE.AUF0B 8GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-2400C17-8GSXW 8GB
G Skill Intl F4-2400C17-8GSXW 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kllisre HMA81GU6AFR8N-VK 8GB
Kllisre HMA81GU6AFR8N-VK 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
SK Hynix HMA851S6DJR6N-XN 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3333C16-16GVR 16GB
G Skill Intl F4-3333C16-16GVR 16GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3333C16-8GTZ 8GB
G Skill Intl F4-3333C16-8GTZ 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
G Skill Intl F4-3600C16-8GTZSW 8GB
G Skill Intl F4-3600C16-8GTZSW 8GB
内存RAM