RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston KF560C40-16 16GB
Samsung M393A5143DB0-CRC 4GB

Kingston KF560C40-16 16GB vs Samsung M393A5143DB0-CRC 4GB

总分
star star star star star
Kingston KF560C40-16 16GB

Kingston KF560C40-16 16GB

总分
star star star star star
Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

差异 规格 评论

差异

Kingston KF560C40-16 16GB 需要考虑的原因
Kingston KF560C40-16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 47
    左右 49% 更低的延时
  • 更快的读取速度，GB/s
    14.8 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 7.5
    测试中的平均数值
Samsung M393A5143DB0-CRC 4GB 需要考虑的原因
Samsung M393A5143DB0-CRC 4GB
报告一个错误

规格

完整的技术规格清单
Kingston KF560C40-16 16GB
Samsung M393A5143DB0-CRC 4GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 47
  • 读取速度，GB/s
    14.8 left arrow 10.0
  • 写入速度，GB/s
    13.0 left arrow 7.5
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3524 left arrow 2308

Kingston KF560C40-16 16GB RAM的比较

Kingston KF548C38-16 16GB
Kingston KF552C40-16 16GB

Samsung M393A5143DB0-CRC 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-2400C16-4GRS 4GB
G Skill Intl F4-2400C16-4GRS 4GB
内存RAM
Crucial Technology BL16G30C15U4B.16FE 16GB
Crucial Technology BL16G30C15U4B.16FE 16GB
G Skill Intl F4-3600C16-16GTZNC 16GB
G Skill Intl F4-3600C16-16GTZNC 16GB
内存RAM
Corsair CMK64GX4M4K3733C17 16GB
Corsair CMK64GX4M4K3733C17 16GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
内存RAM
Kingston KF560C40-16 16GB
Kingston KF560C40-16 16GB
Crucial Technology C 8GB
Crucial Technology C 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Team Group Inc. DDR4 2666 8GB
Team Group Inc. DDR4 2666 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston XRGM6C-MIB 16GB
Kingston XRGM6C-MIB 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB
Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965600-012.A01G 16GB
Kingston 9965600-012.A01G 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
内存RAM
Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
Corsair CM4X16GD3200C16K4E 16GB
Corsair CM4X16GD3200C16K4E 16GB
内存RAM