Kingston KHX1600C9D3/4G 4GB vs EXCELERAM D4168G8HHSS9CJRB21 16GB

总分

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

总分

EXCELERAM D4168G8HHSS9CJRB21 16GB

EXCELERAM D4168G8HHSS9CJRB21 16GB

差异规格评论

差异

Kingston KHX1600C9D3/4G 4GB

需要考虑的原因
Kingston KHX1600C9D3/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 89

左右 60% 更低的延时
更快的读取速度，GB/s

14.5 14.2

测试中的平均数值
更快的写入速度，GB/s

9.7 7.1

测试中的平均数值

EXCELERAM D4168G8HHSS9CJRB21 16GB

需要考虑的原因
EXCELERAM D4168G8HHSS9CJRB21 16GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/4G 4GB

EXCELERAM D4168G8HHSS9CJRB21 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 89
读取速度，GB/s

14.5 14.2
写入速度，GB/s

9.7 7.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2465 1571

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMU64GX4M4C3000C15 16GB

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PNY Electronics PNY 2GB

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Micron Technology 16KTF1G64HZ-1G9E2 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

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Kingston XF875V-HYA 8GB

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Kingston KF3600C17D4/8GX 8GB

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Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Kingston 9905712-008.A00G 16GB

Kingston 9905712-008.A00G 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingston 9905622-075.A00G 8GB

Kingston 9905622-075.A00G 8GB