Kingston KHX1600C9D3/4G 4GB vs G Skill Intl F4-3000C15-8GTZB 8GB

总分

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

总分

G Skill Intl F4-3000C15-8GTZB 8GB

G Skill Intl F4-3000C15-8GTZB 8GB

差异规格评论

差异

Kingston KHX1600C9D3/4G 4GB

需要考虑的原因
Kingston KHX1600C9D3/4G 4GB

报告一个错误

G Skill Intl F4-3000C15-8GTZB 8GB

需要考虑的原因
G Skill Intl F4-3000C15-8GTZB 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 36

左右 -20% 更低的延时
更快的读取速度，GB/s

18.1 14.5

测试中的平均数值
更快的写入速度，GB/s

14.2 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/4G 4GB

G Skill Intl F4-3000C15-8GTZB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 30
读取速度，GB/s

14.5 18.1
写入速度，GB/s

9.7 14.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2465 3352

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX1600C9D3/4G 4GB

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G Skill Intl F4-3000C15-8GTZB 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Samsung M471B5273EB0-CK0 4GB

Crucial Technology CT16G4SFD824A.M16FD1 16GB

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Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

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G Skill Intl F4-3600C17-8GTZR 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB