Kingston KHX1600C9D3/4G 4GB vs Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

总分

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

总分

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

差异规格评论

差异

Kingston KHX1600C9D3/4G 4GB

需要考虑的原因
Kingston KHX1600C9D3/4G 4GB

报告一个错误

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 36

左右 -38% 更低的延时
更快的读取速度，GB/s

16.2 14.5

测试中的平均数值
更快的写入速度，GB/s

12.7 9.7

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/4G 4GB

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 26
读取速度，GB/s

14.5 16.2
写入速度，GB/s

9.7 12.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2465 2728

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Heoriady M378A1K43BB2-CTD 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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G Skill Intl F4-2666C19-8GIS 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Kingston 9905598-009.A00G 8GB

Kingston 9905598-009.A00G 8GB

Kingston 99U5474-038.A00LF 4GB

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G Skill Intl F4-3200C16-8GTZRN 8GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

G Skill Intl F4-2800C15-8GTZB 8GB

G Skill Intl F4-2800C15-8GTZB 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMD64GX4M8X3800C19 8GB

Corsair CMD64GX4M8X3800C19 8GB