Kingston KHX1600C9D3/4G 4GB vs Micron Technology CT4G4DFS8213.8FA11 4GB

总分

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

总分

Micron Technology CT4G4DFS8213.8FA11 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

差异规格评论

差异

Kingston KHX1600C9D3/4G 4GB

需要考虑的原因
Kingston KHX1600C9D3/4G 4GB

报告一个错误

Micron Technology CT4G4DFS8213.8FA11 4GB

需要考虑的原因
Micron Technology CT4G4DFS8213.8FA11 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 36

左右 -3% 更低的延时
更快的读取速度，GB/s

15 14.5

测试中的平均数值
更快的写入速度，GB/s

12.0 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/4G 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 35
读取速度，GB/s

14.5 15.0
写入速度，GB/s

9.7 12.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2465 2654

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP164U64CP6-Y5 512MB

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Corsair CMK32GX4M4A2800C16 8GB

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Kingston 9965516-112.A00LF 16GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Kingston KF3200C16D4/8GX 8GB

Kingston KF3200C16D4/8GX 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Crucial Technology CT16G4DFD824A.M16FD 16GB

Crucial Technology CT16G4DFD824A.M16FD 16GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Corsair CMR32GX4M4C3000C16 8GB

Corsair CMR32GX4M4C3000C16 8GB