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Kingston KHX1600C9D3/4G 4GB
Mushkin MR[ABC]4U360JNNM8G 8GB

Kingston KHX1600C9D3/4G 4GB vs Mushkin MR[ABC]4U360JNNM8G 8GB

总分
star star star star star
Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

总分
star star star star star
Mushkin MR[ABC]4U360JNNM8G 8GB

Mushkin MR[ABC]4U360JNNM8G 8GB

差异 规格 评论

差异

Kingston KHX1600C9D3/4G 4GB 需要考虑的原因
Kingston KHX1600C9D3/4G 4GB
报告一个错误
Mushkin MR[ABC]4U360JNNM8G 8GB 需要考虑的原因
Mushkin MR[ABC]4U360JNNM8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 36
    左右 -29% 更低的延时
  • 更快的读取速度，GB/s
    19.8 left arrow 14.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston KHX1600C9D3/4G 4GB
Mushkin MR[ABC]4U360JNNM8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 28
  • 读取速度，GB/s
    14.5 left arrow 19.8
  • 写入速度，GB/s
    9.7 left arrow 14.5
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2465 left arrow 3650

Kingston KHX1600C9D3/4G 4GB RAM的比较

Kingston 99U5403-050.A00LF 4GB
Kingston KHX1600C10D3/8G 8GB

Mushkin MR[ABC]4U360JNNM8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Mushkin MR[ABC]4U360JNNM8G 8GB
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内存RAM
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内存RAM
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Samsung M4 70T5663CZ3-CE6 2GB
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Crucial Technology CT8G4DFD824A.C16FE 8GB
内存RAM
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G Skill Intl F4-4133C19-8GTZR 8GB
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内存RAM
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Crucial Technology CT102464BF160B-16F 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
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G Skill Intl F4-3733C17-4GVK 4GB
内存RAM
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Kingston KHX2800C14D4/8GX 8GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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G Skill Intl F4-4400C19-32GTZR 32GB
内存RAM
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Kingston 99U5474-038.A00LF 4GB
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G Skill Intl F4-3600C17-4GVK 4GB
内存RAM