Kingston KHX1600C9D3/8G 8GB vs Crucial Technology BL32G32C16U4W.M16FB1 32GB

总分

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

总分

Crucial Technology BL32G32C16U4W.M16FB1 32GB

Crucial Technology BL32G32C16U4W.M16FB1 32GB

差异规格评论

差异

Kingston KHX1600C9D3/8G 8GB

需要考虑的原因
Kingston KHX1600C9D3/8G 8GB

报告一个错误

Crucial Technology BL32G32C16U4W.M16FB1 32GB

需要考虑的原因
Crucial Technology BL32G32C16U4W.M16FB1 32GB

报告一个错误

低于PassMark测试中的延时，ns

29 38

左右 -31% 更低的延时
更快的读取速度，GB/s

17.9 14.7

测试中的平均数值
更快的写入速度，GB/s

16.0 9.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/8G 8GB

Crucial Technology BL32G32C16U4W.M16FB1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 29
读取速度，GB/s

14.7 17.9
写入速度，GB/s

9.1 16.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2496 3795

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Samsung M471B5273DH0-CH9 4GB

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Crucial Technology CT8G4DFS824A.C8FBD1 8GB

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Crucial Technology BL16G32C16U4B.16FE 16GB

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InnoDisk Corporation 16GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Corsair CMK32GX4M2E3200C16 16GB

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G Skill Intl F4-2133C15-16GFT 16GB

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PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

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Crucial Technology CT4G4SFS8213.C8FBD2 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-2133C15-4GNT 4GB

G Skill Intl F4-2133C15-4GNT 4GB

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

Corsair CMWX16GC3200C16W4 16GB

Corsair CMWX16GC3200C16W4 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Corsair CMSO16GX4M1A2133C15 16GB

Corsair CMSO16GX4M1A2133C15 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

SK Hynix HMA425S6BJR6N-UH 2GB

SK Hynix HMA425S6BJR6N-UH 2GB