Kingston KHX1600C9D3/8G 8GB vs Crucial Technology CT8G4DFD8213.C16FBD1 8GB

总分

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

总分

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

差异规格评论

差异

Kingston KHX1600C9D3/8G 8GB

需要考虑的原因
Kingston KHX1600C9D3/8G 8GB

报告一个错误

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FBD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 38

左右 -15% 更低的延时
更快的读取速度，GB/s

16.6 14.7

测试中的平均数值
更快的写入速度，GB/s

11.8 9.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/8G 8GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 33
读取速度，GB/s

14.7 16.6
写入速度，GB/s

9.1 11.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2496 2947

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5474-010.A00LF 2GB

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Samsung M393B2G70BH0-CH9 16GB

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G Skill Intl F4-4000C19-16GTZKK 16GB

G Skill Intl F4-4000C19-16GTZKK 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 16ATF2G64AZ-2G3H1 16GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB