Kingston KHX1600C9D3/8G 8GB vs Panram International Corporation L421008G4C1528K34O8A 8GB

总分

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

总分

Panram International Corporation L421008G4C1528K34O8A 8GB

Panram International Corporation L421008G4C1528K34O8A 8GB

差异规格评论

差异

Kingston KHX1600C9D3/8G 8GB

需要考虑的原因
Kingston KHX1600C9D3/8G 8GB

报告一个错误

Panram International Corporation L421008G4C1528K34O8A 8GB

需要考虑的原因
Panram International Corporation L421008G4C1528K34O8A 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 38

左右 -73% 更低的延时
更快的读取速度，GB/s

17.5 14.7

测试中的平均数值
更快的写入速度，GB/s

12.8 9.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/8G 8GB

Panram International Corporation L421008G4C1528K34O8A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 22
读取速度，GB/s

14.7 17.5
写入速度，GB/s

9.1 12.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2496 3013

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kingston KHX2666C16D4/32GX 32GB

Kingston KHX2666C16D4/32GX 32GB

SK Hynix HMT451U6BFR8A-PB 4GB

SK Hynix HMT451U6BFR8A-PB 4GB

SK Hynix HMT351U6EFR8C-PB 4GB

SK Hynix HMT351U6EFR8C-PB 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Kingston X0N6VG-HYD2 16GB

Kingston X0N6VG-HYD2 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Patriot Memory (PDP Systems) PSD48G266681S 8GB

Patriot Memory (PDP Systems) PSD48G266681S 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

ASint Technology SSY2128M8-JGE3B 1GB

ASint Technology SSY2128M8-JGE3B 1GB

G Skill Intl F4-3200C14-16GTZKY 16GB

G Skill Intl F4-3200C14-16GTZKY 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Kingston 9905713-001.A00G 4GB

Kingston 9905713-001.A00G 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CM4X16GC3000C15D4 16GB

Corsair CM4X16GC3000C15D4 16GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Crucial Technology BLT8G4D30AETA.K16FD 8GB

Crucial Technology BLT8G4D30AETA.K16FD 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Apacer Technology GD2.22428S.001 8GB

Apacer Technology GD2.22428S.001 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Corsair MK16GX4M2B3200C16 8GB

Corsair MK16GX4M2B3200C16 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9905630-018.A00G 8GB

Kingston 9905630-018.A00G 8GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N