Kingston KHX1600C9D3/8G 8GB vs Transcend Information JM2666HSB-16G 16GB

总分

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

总分

Transcend Information JM2666HSB-16G 16GB

Transcend Information JM2666HSB-16G 16GB

差异规格评论

差异

Kingston KHX1600C9D3/8G 8GB

需要考虑的原因
Kingston KHX1600C9D3/8G 8GB

报告一个错误

Transcend Information JM2666HSB-16G 16GB

需要考虑的原因
Transcend Information JM2666HSB-16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 38

左右 -12% 更低的延时
更快的读取速度，GB/s

17.3 14.7

测试中的平均数值
更快的写入速度，GB/s

14.7 9.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/8G 8GB

Transcend Information JM2666HSB-16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 34
读取速度，GB/s

14.7 17.3
写入速度，GB/s

9.1 14.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2496 3145

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5773DH0-CH9 2GB

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Corsair CMW16GX4M2Z3200C16 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Corsair CMN16GX4M2Z3200C16 8GB

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Kingmax Semiconductor GLNG43F-18---------- 8GB

Mushkin 996902 2GB

Mushkin 996902 2GB

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Crucial Technology CT8G4SFS824A.C8FP 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3733C17-16GTZKK 16GB

G Skill Intl F4-3733C17-16GTZKK 16GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Corsair CMD16GX4M4C3200C15 4GB

Corsair CMD16GX4M4C3200C15 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Samsung M471A1K1KCB1-CRC 8GB

Samsung M471A1K1KCB1-CRC 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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G Skill Intl F4-2400C17-4GVR 4GB