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Kingston KHX1600C9S3L/4G 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB

Kingston KHX1600C9S3L/4G 4GB vs Crucial Technology BLS16G4D26BFSB.16FBD 16GB

总分
star star star star star
Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

总分
star star star star star
Crucial Technology BLS16G4D26BFSB.16FBD 16GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

差异 规格 评论

差异

Kingston KHX1600C9S3L/4G 4GB 需要考虑的原因
Kingston KHX1600C9S3L/4G 4GB
报告一个错误
Crucial Technology BLS16G4D26BFSB.16FBD 16GB 需要考虑的原因
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 40
    左右 -82% 更低的延时
  • 更快的读取速度，GB/s
    17.9 left arrow 13.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 22
  • 读取速度，GB/s
    13.1 left arrow 17.9
  • 写入速度，GB/s
    8.5 left arrow 12.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2148 left arrow 3152

Kingston KHX1600C9S3L/4G 4GB RAM的比较

Kingston TSB16D3LS1KFG/4G 4GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB RAM的比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD16GX4M4B3333C16 4GB
Corsair CMD16GX4M4B3333C16 4GB
内存RAM
Transcend Information JM3200HLB-8G 8GB
Transcend Information JM3200HLB-8G 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-4000C18-8GTZ 8GB
G Skill Intl F4-4000C18-8GTZ 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston 9905701-032.A00G 16GB
Kingston 9905701-032.A00G 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Corsair CMK64GX4M4C3333C16 16GB
Corsair CMK64GX4M4C3333C16 16GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Apacer Technology 78.C1GMM.AUF0B 8GB
Apacer Technology 78.C1GMM.AUF0B 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
SK Hynix HMA81GU6AFR8N-UH 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston CBD24D4S7S8MB-8 8GB
Kingston CBD24D4S7S8MB-8 8GB
内存RAM