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Kingston KHX1600C9S3L/4G 4GB
Kingston 9905598-026.A00G 16GB

Kingston KHX1600C9S3L/4G 4GB vs Kingston 9905598-026.A00G 16GB

总分
star star star star star
Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

总分
star star star star star
Kingston 9905598-026.A00G 16GB

Kingston 9905598-026.A00G 16GB

差异 规格 评论

差异

Kingston KHX1600C9S3L/4G 4GB 需要考虑的原因
Kingston KHX1600C9S3L/4G 4GB
报告一个错误
  • 更快的读取速度，GB/s
    13.1 left arrow 12.9
    测试中的平均数值
Kingston 9905598-026.A00G 16GB 需要考虑的原因
Kingston 9905598-026.A00G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 40
    左右 -29% 更低的延时
  • 更快的写入速度，GB/s
    9.3 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston KHX1600C9S3L/4G 4GB
Kingston 9905598-026.A00G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 31
  • 读取速度，GB/s
    13.1 left arrow 12.9
  • 写入速度，GB/s
    8.5 left arrow 9.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2148 left arrow 2646

Kingston KHX1600C9S3L/4G 4GB RAM的比较

Kingston TSB16D3LS1KFG/4G 4GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB

Kingston 9905598-026.A00G 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Kingston 9905598-026.A00G 16GB
Kingston 9905598-026.A00G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-5333C22-8GTRG 8GB
G Skill Intl F4-5333C22-8GTRG 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Mushkin 99[2/7/4]191F 4GB
Mushkin 99[2/7/4]191F 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Gloway International (HK) STK2400C15-16GB 16GB
Gloway International (HK) STK2400C15-16GB 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK16GX4M2B4266C19 8GB
Corsair CMK16GX4M2B4266C19 8GB
内存RAM
Kingston 9965525-058.A00LF 8GB
Kingston 9965525-058.A00LF 8GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
SK Hynix HMA81GU6CJR8N-VK 8GB
SK Hynix HMA81GU6CJR8N-VK 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Kingston 9905744-024.A00G 16GB
Kingston 9905744-024.A00G 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Team Group Inc. Team-Elite-2400 4GB
Team Group Inc. Team-Elite-2400 4GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Transcend Information JM2400HSB-8G 8GB
Transcend Information JM2400HSB-8G 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4000C18-8GTZSW 8GB
G Skill Intl F4-4000C18-8GTZSW 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Samsung M378A1G43EB1-CRC 8GB
Samsung M378A1G43EB1-CRC 8GB
内存RAM