Kingston KHX1600C9S3L/8G 8GB vs Micron Technology 4ATF51264AZ-2G3E1 4GB

总分

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

总分

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

差异规格评论

差异

Kingston KHX1600C9S3L/8G 8GB

需要考虑的原因
Kingston KHX1600C9S3L/8G 8GB

报告一个错误

Micron Technology 4ATF51264AZ-2G3E1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-2G3E1 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 41

左右 -52% 更低的延时
更快的读取速度，GB/s

15 13.4

测试中的平均数值
更快的写入速度，GB/s

10.9 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9S3L/8G 8GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 27
读取速度，GB/s

13.4 15.0
写入速度，GB/s

9.2 10.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2348 2288

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

SK Hynix HMT351S6EFR8C-PB 4GB

SK Hynix HMT351S6EFR8C-PB 4GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Corsair CMR64GX4M4C3200C16 16GB

Corsair CMR64GX4M4C3200C16 16GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905625-062.A00G 8GB

Kingston 9905625-062.A00G 8GB

Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

Transcend Information TS512MLH64V1H 4GB

Transcend Information TS512MLH64V1H 4GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Golden Empire CL15-15-15 D4-2133 8GB

Golden Empire CL15-15-15 D4-2133 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Kingston 9965589-005.A01G 8GB

Kingston 9965589-005.A01G 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Corsair CMW32GX4M2D3600C18 16GB

Corsair CMW32GX4M2D3600C18 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kllisre M471A1K43CB1-CTD 8GB

Kllisre M471A1K43CB1-CTD 8GB