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Kingston KHX16LC9/8GX 8GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB

Kingston KHX16LC9/8GX 8GB vs Crucial Technology CT16G4SFRA32A.C8FB 16GB

总分
star star star star star
Kingston KHX16LC9/8GX 8GB

Kingston KHX16LC9/8GX 8GB

总分
star star star star star
Crucial Technology CT16G4SFRA32A.C8FB 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

差异 规格 评论

差异

Kingston KHX16LC9/8GX 8GB 需要考虑的原因
Kingston KHX16LC9/8GX 8GB
报告一个错误
Crucial Technology CT16G4SFRA32A.C8FB 16GB 需要考虑的原因
Crucial Technology CT16G4SFRA32A.C8FB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 38
    左右 -3% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Kingston KHX16LC9/8GX 8GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 37
  • 读取速度，GB/s
    14.3 left arrow 15.1
  • 写入速度，GB/s
    9.4 left arrow 12.3
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2511 left arrow 2939

Kingston KHX16LC9/8GX 8GB RAM的比较

Kingston KHX1600C9D3/8G 8GB
Samsung M471A1G43DB0-0-B 8GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F4-2800C15-8GTXG 8GB
G Skill Intl F4-2800C15-8GTXG 8GB
内存RAM
Kingston KHX16LC9/8GX 8GB
Kingston KHX16LC9/8GX 8GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
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内存RAM
Kingston KHX1600C9D3/8G 8GB
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Heoriady HX2666CX15D4/4G 4GB
Heoriady HX2666CX15D4/4G 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston HX421C14FB/4 4GB
Kingston HX421C14FB/4 4GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Corsair CMSX32GX4M2A3200C22 16GB
内存RAM
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内存RAM
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Samsung M471B5273CH0-CH9 4GB
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Corsair CMK16GX4M2K4133C19 8GB
内存RAM
Ramaxel Technology RMT3010EC58E8F1333 2GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
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Kingston 9905701-132.A00G 16GB
内存RAM