Kingston KHX1866C10D3/4G 4GB vs Corsair CMK64GX4M8A2133C13 8GB

总分

Kingston KHX1866C10D3/4G 4GB

Kingston KHX1866C10D3/4G 4GB

总分

Corsair CMK64GX4M8A2133C13 8GB

Corsair CMK64GX4M8A2133C13 8GB

差异规格评论

差异

Kingston KHX1866C10D3/4G 4GB

需要考虑的原因
Kingston KHX1866C10D3/4G 4GB

报告一个错误

更快的读取速度，GB/s

15.2 13.2

测试中的平均数值

Corsair CMK64GX4M8A2133C13 8GB

需要考虑的原因
Corsair CMK64GX4M8A2133C13 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 38

左右 -36% 更低的延时
更快的写入速度，GB/s

10.6 9.3

测试中的平均数值
更高的内存带宽，mbps

17000 14200

左右 1.2 更高的带宽

规格

完整的技术规格清单

Kingston KHX1866C10D3/4G 4GB

Corsair CMK64GX4M8A2133C13 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 28
读取速度，GB/s

15.2 13.2
写入速度，GB/s

9.3 10.6
内存带宽，mbps

14200 17000

Other

描述

PC3-14200, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2496 2814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

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Kingston KHX1866C10D3/4G 4GB

Kingston KHX1866C10D3/4G 4GB

Corsair CMK64GX4M8A2133C13 8GB

Corsair CMK64GX4M8A2133C13 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Avant Technology W641GU42J9266NB 8GB

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Kingston 9965525-018.A00LF 4GB

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Samsung M3 78T2863EHS-CF7 1GB

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G Skill Intl F4-3000C16-8GTZN 8GB

G Skill Intl F4-3000C16-8GTZN 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Samsung M471A1A43CB1-CRC 8GB

Samsung M471A1A43CB1-CRC 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Crucial Technology BLS4G4D240FSA.8FARG 4GB

Crucial Technology BLS4G4D240FSA.8FARG 4GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Corsair CMT64GX4M8Z3600C16 8GB

Corsair CMT64GX4M8Z3600C16 8GB