Kingston KHX1866C10D3/4G 4GB vs G Skill Intl F4-2400C16-8GIS 8GB

总分

Kingston KHX1866C10D3/4G 4GB

Kingston KHX1866C10D3/4G 4GB

总分

G Skill Intl F4-2400C16-8GIS 8GB

G Skill Intl F4-2400C16-8GIS 8GB

差异规格评论

差异

Kingston KHX1866C10D3/4G 4GB

需要考虑的原因
Kingston KHX1866C10D3/4G 4GB

报告一个错误

G Skill Intl F4-2400C16-8GIS 8GB

需要考虑的原因
G Skill Intl F4-2400C16-8GIS 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 38

左右 -65% 更低的延时
更快的读取速度，GB/s

16.3 15.2

测试中的平均数值
更快的写入速度，GB/s

11.1 9.3

测试中的平均数值
更高的内存带宽，mbps

19200 14200

左右 1.35 更高的带宽

规格

完整的技术规格清单

Kingston KHX1866C10D3/4G 4GB

G Skill Intl F4-2400C16-8GIS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 23
读取速度，GB/s

15.2 16.3
写入速度，GB/s

9.3 11.1
内存带宽，mbps

14200 19200

Other

描述

PC3-14200, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 16
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2496 2867

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Corsair CMZ16GX3M2A2400C10 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Kingston 9905744-027.A00G 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

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Kingston 9905469-143.A00LF 4GB

Corsair CMT32GX4M2K4000C19 16GB

Corsair CMT32GX4M2K4000C19 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB