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Kingston KHX1866C10D3/4G 4GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Kingston KHX1866C10D3/4G 4GB vs Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

总分
star star star star star
Kingston KHX1866C10D3/4G 4GB

Kingston KHX1866C10D3/4G 4GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

差异 规格 评论

差异

Kingston KHX1866C10D3/4G 4GB 需要考虑的原因
Kingston KHX1866C10D3/4G 4GB
报告一个错误
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 38
    左右 -36% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 15.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 9.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 14200
    左右 1.8 更高的带宽

规格

完整的技术规格清单
Kingston KHX1866C10D3/4G 4GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 28
  • 读取速度，GB/s
    15.2 left arrow 17.5
  • 写入速度，GB/s
    9.3 left arrow 15.3
  • 内存带宽，mbps
    14200 left arrow 25600
Other
  • 描述
    PC3-14200, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    no data left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2496 left arrow 3673

Kingston KHX1866C10D3/4G 4GB RAM的比较

Kingston HX318C10FK/4 4GB
Kingston 9905678-044.A00G 8GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston ACR26D4U9S8ME-8 8GB
Kingston ACR26D4U9S8ME-8 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3200C16-16GTZSK 16GB
G Skill Intl F4-3200C16-16GTZSK 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
Samsung M378A2K43BB1-CPB 16GB
Samsung M378A2K43BB1-CPB 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Samsung M391A1G43EB1-CRC 8GB
Samsung M391A1G43EB1-CRC 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CM4X8GF2400C16K4 8GB
Corsair CM4X8GF2400C16K4 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3200C16-8GTZRX 8GB
G Skill Intl F4-3200C16-8GTZRX 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Smart Modular SF464128CKHIWDFSEG 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
PUSKILL PJ8TFK1GM8 8GB
PUSKILL PJ8TFK1GM8 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
内存RAM
Transcend Information TS512MSK64W6H 4GB
Transcend Information TS512MSK64W6H 4GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
内存RAM