Kingston KHX1866C10D3/4G 4GB vs Kingston HP32D4U8S8ME-8X 8GB

总分

Kingston KHX1866C10D3/4G 4GB

Kingston KHX1866C10D3/4G 4GB

总分

Kingston HP32D4U8S8ME-8X 8GB

Kingston HP32D4U8S8ME-8X 8GB

差异规格评论

差异

Kingston KHX1866C10D3/4G 4GB

需要考虑的原因
Kingston KHX1866C10D3/4G 4GB

报告一个错误

Kingston HP32D4U8S8ME-8X 8GB

需要考虑的原因
Kingston HP32D4U8S8ME-8X 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 38

左右 -27% 更低的延时
更快的读取速度，GB/s

15.8 15.2

测试中的平均数值
更快的写入速度，GB/s

12.6 9.3

测试中的平均数值
更高的内存带宽，mbps

25600 14200

左右 1.8 更高的带宽

规格

完整的技术规格清单

Kingston KHX1866C10D3/4G 4GB

Kingston HP32D4U8S8ME-8X 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 30
读取速度，GB/s

15.2 15.8
写入速度，GB/s

9.3 12.6
内存带宽，mbps

14200 25600

Other

描述

PC3-14200, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

no data 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2496 3059

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMY8GX3M2A2666C10 4GB

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Corsair CMW16GX4M2Z4600C18 8GB

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Mushkin MR[A/B]4U320LLLM8G 8GB

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A-DATA Technology ADOVE1A0834E 1GB

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Crucial Technology BLS4G4D240FSB.8FBD2 4GB

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Crucial Technology CT8G4DFRA266.C8FE 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Samsung M378A5244BB0-CRC 4GB

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G Skill Intl F4-3000C16-16GSXWB 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Smart Modular SF464128CK8I6GKSEG 4GB

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Corsair CM2X2048-6400C5 2GB

Kingston KHX2666C15D4/8G 8GB

Kingston KHX2666C15D4/8G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

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Micron Technology 9ASF1G72PZ-2G3B1 8GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Corsair CMK16GX4M2B3600C18 8GB

Corsair CMK16GX4M2B3600C18 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Avant Technology W6451U66J7240ND 4GB

Avant Technology W6451U66J7240ND 4GB