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Kingston KHX1866C9D3/8GX 8GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

Kingston KHX1866C9D3/8GX 8GB vs Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

总分
star star star star star
Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

差异 规格 评论

差异

Kingston KHX1866C9D3/8GX 8GB 需要考虑的原因
Kingston KHX1866C9D3/8GX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 66
    左右 45% 更低的延时
  • 更快的写入速度，GB/s
    10.4 left arrow 9.4
    测试中的平均数值
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.4 left arrow 15.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston KHX1866C9D3/8GX 8GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 66
  • 读取速度，GB/s
    15.8 left arrow 16.4
  • 写入速度，GB/s
    10.4 left arrow 9.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2751 left arrow 2038

Kingston KHX1866C9D3/8GX 8GB RAM的比较

Kingston KHX1866C10D3/8G 8GB
Apacer Technology 78.C2GFL.C720B 8GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Corsair CML8GX3M2A1600C9 4GB
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Apacer Technology 78.01G86.9H50C 1GB
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Micron Technology 16JSF25664HZ-1G1F1 2GB
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Kingston 9905469-143.A00LF 4GB
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Kingston 99U5474-028.A00LF 4GB
G Skill Intl F4-3000C15-8GVGB 8GB
G Skill Intl F4-3000C15-8GVGB 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905713-008.A00G 4GB
Kingston 9905713-008.A00G 4GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
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SK Hynix HMA851U6JJR6N-VK 4GB
内存RAM
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Kingston 9965662-016.A00G 16GB
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Wilk Elektronik S.A. GR2133D464L15/8G 8GB
内存RAM