Kingston KHX1866C9D3/8GX 8GB vs Micron Technology AFSD416ES1P 16GB

总分

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

总分

Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

差异规格评论

差异

Kingston KHX1866C9D3/8GX 8GB

需要考虑的原因
Kingston KHX1866C9D3/8GX 8GB

报告一个错误

更快的读取速度，GB/s

15.8 14.5

测试中的平均数值

Micron Technology AFSD416ES1P 16GB

需要考虑的原因
Micron Technology AFSD416ES1P 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 -44% 更低的延时
更快的写入速度，GB/s

10.7 10.4

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston KHX1866C9D3/8GX 8GB

Micron Technology AFSD416ES1P 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 25
读取速度，GB/s

15.8 14.5
写入速度，GB/s

10.4 10.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2751 2620

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

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Kingston KTC1G-UDIMM 1GB

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Chun Well Technology Holding Limited MD4U0840180BCW 8GB

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Crucial Technology BLS4G4S240FSD.8FBD 4GB

Crucial Technology BLS4G4S240FSD.8FBD 4GB

Samsung M393B2G70BH0-CH9 16GB

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Corsair CMD128GX4M8B3200C16 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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