Kingston KHX2133C11D3/4GX 4GB vs Panram International Corporation PSD31333C94G2VS 4GB

总分

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

总分

Panram International Corporation PSD31333C94G2VS 4GB

Panram International Corporation PSD31333C94G2VS 4GB

差异规格评论

差异

Kingston KHX2133C11D3/4GX 4GB

需要考虑的原因
Kingston KHX2133C11D3/4GX 4GB

报告一个错误

更快的读取速度，GB/s

15.5 11.3

测试中的平均数值
更快的写入速度，GB/s

10.1 7.2

测试中的平均数值

Panram International Corporation PSD31333C94G2VS 4GB

需要考虑的原因
Panram International Corporation PSD31333C94G2VS 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 -32% 更低的延时

规格

完整的技术规格清单

Kingston KHX2133C11D3/4GX 4GB

Panram International Corporation PSD31333C94G2VS 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

37 28
读取速度，GB/s

15.5 11.3
写入速度，GB/s

10.1 7.2
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2595 1646

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16ATF4G64HZ-3G2E1 32GB

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Samsung M471B5673FH0-CF8 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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G Skill Intl F4-4266C17-8GTZRB 8GB

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Peak Electronics 256X64M-67E 2GB

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Corsair CMK16GX4M2L3000C15 8GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Kingston 9965525-155.A00LF 8GB

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Crucial Technology BLS8G4D26BFSC.16FE 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

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Kingston KHX2400C11D3/4GX 4GB

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V-GEN D4H8GL26A8TS6 8GB

V-GEN D4H8GL26A8TS6 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

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Corsair CMSX32GX4M2A2933C19 16GB

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Kingston 9965525-144.A00LF 8GB

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Essencore Limited KD48GU88C-26N190A 8GB

Essencore Limited KD48GU88C-26N190A 8GB