Kingston KHX2800C14D4/8GX 8GB vs Mushkin MRA4S266GHHF32G 32GB

总分

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

总分

Mushkin MRA4S266GHHF32G 32GB

Mushkin MRA4S266GHHF32G 32GB

差异规格评论

差异

Kingston KHX2800C14D4/8GX 8GB

需要考虑的原因
Kingston KHX2800C14D4/8GX 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 35

左右 9% 更低的延时

Mushkin MRA4S266GHHF32G 32GB

需要考虑的原因
Mushkin MRA4S266GHHF32G 32GB

报告一个错误

更快的读取速度，GB/s

16.9 16.2

测试中的平均数值
更快的写入速度，GB/s

14.6 12.5

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25 更高的带宽

规格

完整的技术规格清单

Kingston KHX2800C14D4/8GX 8GB

Mushkin MRA4S266GHHF32G 32GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

32 35
读取速度，GB/s

16.2 16.9
写入速度，GB/s

12.5 14.6
内存带宽，mbps

17000 21300

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3084 3228

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFS8213.C8FBR1 8GB

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Samsung M471B5674QH0-YK0 2GB

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G Skill Intl F4-3200C15-16GVR 16GB

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Samsung M471B5173QH0-YK0 4GB

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Team Group Inc. DDR4 3600 8GB

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Kingston ACR26D4S9D8MD-16 16GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA82GU6CJR8N-XN 16GB

SK Hynix HMA82GU6CJR8N-XN 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

G Skill Intl F4-3600C17-16GTZSW 16GB

G Skill Intl F4-3600C17-16GTZSW 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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Transcend Information TS512MLH64V4H 4GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB