Kingston KHX3200C18D4/8G 8GB vs Kllisre 8GB

总分

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

总分

Kllisre 8GB

Kllisre 8GB

差异规格评论

差异

Kingston KHX3200C18D4/8G 8GB

需要考虑的原因
Kingston KHX3200C18D4/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 46

左右 39% 更低的延时
更快的读取速度，GB/s

18.2 11.7

测试中的平均数值
更快的写入速度，GB/s

14.9 8.6

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Kllisre 8GB

需要考虑的原因
Kllisre 8GB

报告一个错误

规格

完整的技术规格清单

Kingston KHX3200C18D4/8G 8GB

Kllisre 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

28 46
读取速度，GB/s

18.2 11.7
写入速度，GB/s

14.9 8.6
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3501 2349

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5403-036.A00G 4GB

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Samsung M391B5673EH1-CH9 2GB

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Kingston 9905702-019.A00G 8GB

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Avant Technology F6451U64F9333G 4GB

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Avexir Technologies Corporation T-20181206 8GB

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Crucial Technology CT8G4SFD8213.M16FB 8GB

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EVGA 8GX-D4-2800-MR 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

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G Skill Intl F4-3333C16-16GTZ 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

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G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N