RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston KHX3466C16D4/16GX 16GB
Samsung M378A2G43AB3-CWE 16GB

Kingston KHX3466C16D4/16GX 16GB vs Samsung M378A2G43AB3-CWE 16GB

总分
star star star star star
Kingston KHX3466C16D4/16GX 16GB

Kingston KHX3466C16D4/16GX 16GB

总分
star star star star star
Samsung M378A2G43AB3-CWE 16GB

Samsung M378A2G43AB3-CWE 16GB

差异 规格 评论

差异

Kingston KHX3466C16D4/16GX 16GB 需要考虑的原因
Kingston KHX3466C16D4/16GX 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 35
    左右 20% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 17.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 12.1
    测试中的平均数值
Samsung M378A2G43AB3-CWE 16GB 需要考虑的原因
Samsung M378A2G43AB3-CWE 16GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston KHX3466C16D4/16GX 16GB
Samsung M378A2G43AB3-CWE 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 35
  • 读取速度，GB/s
    18.7 left arrow 17.6
  • 写入速度，GB/s
    15.4 left arrow 12.1
  • 内存带宽，mbps
    19200 left arrow 25600
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    3705 left arrow 3221

Kingston KHX3466C16D4/16GX 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M378A2G43AB3-CWE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX3466C16D4/16GX 16GB
Kingston KHX3466C16D4/16GX 16GB
Samsung M378A2G43AB3-CWE 16GB
Samsung M378A2G43AB3-CWE 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA82GU6DJR8N-VK 16GB
SK Hynix HMA82GU6DJR8N-VK 16GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Apacer Technology 78.CAGPE.AUF0B 8GB
Apacer Technology 78.CAGPE.AUF0B 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Apacer Technology 78.C1GS7.DFW0C 8GB
Apacer Technology 78.C1GS7.DFW0C 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology CT16G4DFD824A.M16FB 16GB
Crucial Technology CT16G4DFD824A.M16FB 16GB
内存RAM
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston XJV223-MIE 16GB
Kingston XJV223-MIE 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung M471A2K43BB1-CPB 16GB
Samsung M471A2K43BB1-CPB 16GB
内存RAM