RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston KHX3466C16D4/16GX 16GB
Samsung M378A2G43AB3-CWE 16GB

Kingston KHX3466C16D4/16GX 16GB vs Samsung M378A2G43AB3-CWE 16GB

总分
star star star star star
Kingston KHX3466C16D4/16GX 16GB

Kingston KHX3466C16D4/16GX 16GB

总分
star star star star star
Samsung M378A2G43AB3-CWE 16GB

Samsung M378A2G43AB3-CWE 16GB

差异 规格 评论

差异

Kingston KHX3466C16D4/16GX 16GB 需要考虑的原因
Kingston KHX3466C16D4/16GX 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 35
    左右 20% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 17.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 12.1
    测试中的平均数值
Samsung M378A2G43AB3-CWE 16GB 需要考虑的原因
Samsung M378A2G43AB3-CWE 16GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston KHX3466C16D4/16GX 16GB
Samsung M378A2G43AB3-CWE 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 35
  • 读取速度，GB/s
    18.7 left arrow 17.6
  • 写入速度，GB/s
    15.4 left arrow 12.1
  • 内存带宽，mbps
    19200 left arrow 25600
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    3705 left arrow 3221

Kingston KHX3466C16D4/16GX 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M378A2G43AB3-CWE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMK32GX4M4A2800C16 8GB
Corsair CMK32GX4M4A2800C16 8GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
内存RAM
Kingston KHX3466C16D4/16GX 16GB
Kingston KHX3466C16D4/16GX 16GB
Samsung M378A2G43AB3-CWE 16GB
Samsung M378A2G43AB3-CWE 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Ramaxel Technology RMUA5090KE68H9F2133 4GB
Ramaxel Technology RMUA5090KE68H9F2133 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Roa Logic BV iGame DDR4 8G 3000 8GB
Roa Logic BV iGame DDR4 8G 3000 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Avant Technology W642GU42J2320NH 16GB
Avant Technology W642GU42J2320NH 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
G Skill Intl F4-4000C17-8GVKB 8GB
G Skill Intl F4-4000C17-8GVKB 8GB
内存RAM
SK Hynix HMA851S6DJR6N-XN 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3600C19-8GTZRB 8GB
G Skill Intl F4-3600C19-8GTZRB 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9965600-005.A01G 16GB
Kingston 9965600-005.A01G 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Samsung M471A1K1KBB0-CPB 8GB
Samsung M471A1K1KBB0-CPB 8GB
内存RAM