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Kingston KP4T2F-PSB 4GB
Golden Empire CL15-15-15 D4-2666 4GB

Kingston KP4T2F-PSB 4GB vs Golden Empire CL15-15-15 D4-2666 4GB

总分
star star star star star
Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

总分
star star star star star
Golden Empire CL15-15-15 D4-2666 4GB

Golden Empire CL15-15-15 D4-2666 4GB

差异 规格 评论

差异

Kingston KP4T2F-PSB 4GB 需要考虑的原因
Kingston KP4T2F-PSB 4GB
报告一个错误
  • 更快的读取速度，GB/s
    13.9 left arrow 13.4
    测试中的平均数值
Golden Empire CL15-15-15 D4-2666 4GB 需要考虑的原因
Golden Empire CL15-15-15 D4-2666 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 38
    左右 -46% 更低的延时
  • 更快的写入速度，GB/s
    11.0 left arrow 9.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston KP4T2F-PSB 4GB
Golden Empire CL15-15-15 D4-2666 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 26
  • 读取速度，GB/s
    13.9 left arrow 13.4
  • 写入速度，GB/s
    9.3 left arrow 11.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2317 left arrow 2673

Kingston KP4T2F-PSB 4GB RAM的比较

Kingston KP4T2F-MIN 4GB
Samsung M471B5773CHS-CF8 2GB

Golden Empire CL15-15-15 D4-2666 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 9905630-066.A00G 16GB
Kingston 9905630-066.A00G 16GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Micron Technology CT4G4DFS8213.8FA11 4GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Corsair CMK32GX4M2A2800C16 16GB
Corsair CMK32GX4M2A2800C16 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFD824A.C16FE 16GB
Crucial Technology CT16G4SFD824A.C16FE 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston 9905678-024.A00G 4GB
Kingston 9905678-024.A00G 4GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-3200C16-8GTZKO 8GB
G Skill Intl F4-3200C16-8GTZKO 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Kingston ACR26D4S9S1ME-4 4GB
Kingston ACR26D4S9S1ME-4 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
SK Hynix HMA851S6CJR6N-UH 4GB
SK Hynix HMA851S6CJR6N-UH 4GB
内存RAM