Kingston KP4T2F-PSB 4GB vs Kingston HP26D4U9D8ME-16X 16GB

总分

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

总分

Kingston HP26D4U9D8ME-16X 16GB

Kingston HP26D4U9D8ME-16X 16GB

差异规格评论

差异

Kingston KP4T2F-PSB 4GB

需要考虑的原因
Kingston KP4T2F-PSB 4GB

报告一个错误

Kingston HP26D4U9D8ME-16X 16GB

需要考虑的原因
Kingston HP26D4U9D8ME-16X 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 38

左右 -27% 更低的延时
更快的读取速度，GB/s

15.8 13.9

测试中的平均数值
更快的写入速度，GB/s

11.3 9.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston KP4T2F-PSB 4GB

Kingston HP26D4U9D8ME-16X 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 30
读取速度，GB/s

13.9 15.8
写入速度，GB/s

9.3 11.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2317 3086

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5173QH0-YK0 4GB

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Crucial Technology BL16G32C16U4R.16FE 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Essencore Limited KD4AGU88C-26N1900 16GB

Essencore Limited KD4AGU88C-26N1900 16GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Kingston 9905701-011.A00G 16GB

Kingston 9905701-011.A00G 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Ramaxel Technology RMUA5110KE68H9F-2400 4GB

Ramaxel Technology RMUA5110KE68H9F-2400 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

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Kingston HX426C16FB2/8-SP 8GB