Kingston KP4T2F-PSB 4GB vs Micron Technology 16ATF4G64HZ-3G2E1 32GB

总分

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

总分

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

差异规格评论

差异

Kingston KP4T2F-PSB 4GB

需要考虑的原因
Kingston KP4T2F-PSB 4GB

报告一个错误

Micron Technology 16ATF4G64HZ-3G2E1 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-3G2E1 32GB

报告一个错误

更快的读取速度，GB/s

16.4 13.9

测试中的平均数值
更快的写入速度，GB/s

13.7 9.3

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston KP4T2F-PSB 4GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 38
读取速度，GB/s

13.9 16.4
写入速度，GB/s

9.3 13.7
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2317 3206

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D26BFSC.16FBD2 8GB

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Samsung M393B1K70QB0-CK0 8GB

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Crucial Technology CT16G4SFRA266.M8FB 16GB

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Crucial Technology CT8G4SFRA266.M8FRS 8GB

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Corsair CMK64GX4M4B3600C18 16GB

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Samsung M378B5173BH0-CH9 4GB

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Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

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G Skill Intl F4-2400C15-16GFX 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Ramaxel Technology RMSA3330ME88HCF-3200 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

EVGA 16G-D4-2666-MR 4GB

EVGA 16G-D4-2666-MR 4GB