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Kingston KP4T2F-PSB 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB

Kingston KP4T2F-PSB 4GB vs Micron Technology 36ASF2G72PZ-2G1A2 16GB

总分
star star star star star
Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

总分
star star star star star
Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

差异 规格 评论

差异

Kingston KP4T2F-PSB 4GB 需要考虑的原因
Kingston KP4T2F-PSB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 52
    左右 27% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.3 left arrow 8.2
    测试中的平均数值
Micron Technology 36ASF2G72PZ-2G1A2 16GB 需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1A2 16GB
报告一个错误
  • 更高的内存带宽，mbps
    17500 left arrow 12800
    左右 1.37 更高的带宽

规格

完整的技术规格清单
Kingston KP4T2F-PSB 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 52
  • 读取速度，GB/s
    13.9 left arrow 10.2
  • 写入速度，GB/s
    9.3 left arrow 8.2
  • 内存带宽，mbps
    12800 left arrow 17500
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow no data
  • 排名PassMark (越多越好)
    2317 left arrow 2319

Kingston KP4T2F-PSB 4GB RAM的比较

Kingston KP4T2F-MIN 4GB
Samsung M471B5773CHS-CF8 2GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Kingston KP4T2F-PSB 4GB
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Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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TwinMOS 8DPT5MK8-TATP 2GB
Apacer Technology 78.CAGPL.ARC0B 8GB
Apacer Technology 78.CAGPL.ARC0B 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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Kingston KHX2400C15/8G 8GB
内存RAM
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Samsung M3 78T2863EHS-CF7 1GB
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内存RAM
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内存RAM
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Kllisre KRE-D3U1600M/8G 8GB
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Samsung M471A2K43CB1-CRCR 16GB
内存RAM