Kingston KTC1G-UDIMM 1GB vs Corsair CM4X16GE2666C18S4 16GB

总分

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

总分

Corsair CM4X16GE2666C18S4 16GB

Corsair CM4X16GE2666C18S4 16GB

差异规格评论

差异

Kingston KTC1G-UDIMM 1GB

需要考虑的原因
Kingston KTC1G-UDIMM 1GB

报告一个错误

更快的读取速度，GB/s

4 16.4

测试中的平均数值
更快的写入速度，GB/s

2,410.6 13.2

测试中的平均数值

Corsair CM4X16GE2666C18S4 16GB

需要考虑的原因
Corsair CM4X16GE2666C18S4 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 61

左右 -91% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Kingston KTC1G-UDIMM 1GB

Corsair CM4X16GE2666C18S4 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 32
读取速度，GB/s

4,230.0 16.4
写入速度，GB/s

2,410.6 13.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

754 3226

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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INTENSO 5641160 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Corsair CMK32GX4M2C3000C16 16GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Corsair CMK32GX4M4A2666C16 8GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

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Micron Technology 9ASF51272PZ-2G1B1 4GB

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G Skill Intl F4-4500C19-8GTZKKE 8GB

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Corsair CMY8GX3M2A2666C10 4GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Team Group Inc. Team-Elite-2400 4GB

Team Group Inc. Team-Elite-2400 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-4133C19-8GTZKWC 8GB

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Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology BLS8G4D26BFSTK.8FD 8GB

Crucial Technology BLS8G4D26BFSTK.8FD 8GB