Kingston KTC1G-UDIMM 1GB vs G Skill Intl F4-3200C16-4GTZB 4GB

总分

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

总分

G Skill Intl F4-3200C16-4GTZB 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

差异规格评论

差异

Kingston KTC1G-UDIMM 1GB

需要考虑的原因
Kingston KTC1G-UDIMM 1GB

报告一个错误

更快的读取速度，GB/s

4 17.1

测试中的平均数值
更快的写入速度，GB/s

2,410.6 13.0

测试中的平均数值

G Skill Intl F4-3200C16-4GTZB 4GB

需要考虑的原因
G Skill Intl F4-3200C16-4GTZB 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 61

左右 -103% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingston KTC1G-UDIMM 1GB

G Skill Intl F4-3200C16-4GTZB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 30
读取速度，GB/s

4,230.0 17.1
写入速度，GB/s

2,410.6 13.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

754 3014

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

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Kingston KTC1G-UDIMM 1GB

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G Skill Intl F4-3200C16-4GTZB 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

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Apacer Technology GD2.0927WH.001 8GB

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Kingston 9905403-061.A00LF 2GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Crucial Technology BLS4G4D240FSC.M8FADG 4GB

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Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

A-DATA Technology AD4U240038G17-BHYA 8GB

A-DATA Technology AD4U240038G17-BHYA 8GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Kingston 9905711-032.A00G 8GB

Kingston 9905711-032.A00G 8GB