Kingston KTC1G-UDIMM 1GB vs G Skill Intl F4-5333C22-8GTRG 8GB

总分

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

总分

G Skill Intl F4-5333C22-8GTRG 8GB

G Skill Intl F4-5333C22-8GTRG 8GB

差异规格评论

差异

Kingston KTC1G-UDIMM 1GB

需要考虑的原因
Kingston KTC1G-UDIMM 1GB

报告一个错误

更快的读取速度，GB/s

4 25.3

测试中的平均数值

G Skill Intl F4-5333C22-8GTRG 8GB

需要考虑的原因
G Skill Intl F4-5333C22-8GTRG 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 61

左右 -135% 更低的延时
更快的写入速度，GB/s

21.4 2,410.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingston KTC1G-UDIMM 1GB

G Skill Intl F4-5333C22-8GTRG 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 26
读取速度，GB/s

4,230.0 25.3
写入速度，GB/s

2,410.6 21.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

754 4252

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Smart Modular SF4641G8CKHIWDFSEG 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

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G Skill Intl F4-2400C17-4GIS 4GB

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AMD R538G1601U2S-UO 8GB

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Corsair CML8GX3M2A1600C9 4GB

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SK Hynix HMA425S6BJR6N-UH 2GB

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Crucial Technology CT8G4DFRA266.C8FJ 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

G Skill Intl F4-3200C14-16GTZR 16GB

G Skill Intl F4-3200C14-16GTZR 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Corsair CMK32GX4M4B2800C14 8GB

Corsair CMK32GX4M4B2800C14 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

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