Kingston KTC1G-UDIMM 1GB vs Kingston X5H5PW-MIB 8GB

总分

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

总分

Kingston X5H5PW-MIB 8GB

Kingston X5H5PW-MIB 8GB

差异规格评论

差异

Kingston KTC1G-UDIMM 1GB

需要考虑的原因
Kingston KTC1G-UDIMM 1GB

报告一个错误

更快的读取速度，GB/s

4 16.9

测试中的平均数值
更快的写入速度，GB/s

2,410.6 12.5

测试中的平均数值

Kingston X5H5PW-MIB 8GB

需要考虑的原因
Kingston X5H5PW-MIB 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 61

左右 -165% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Kingston KTC1G-UDIMM 1GB

Kingston X5H5PW-MIB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 23
读取速度，GB/s

4,230.0 16.9
写入速度，GB/s

2,410.6 12.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

754 3018

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR3 1600 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT16G4SFD8213.C16FDD 16GB

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Corsair CMK64GX4M4C3000C16 16GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

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Micron Technology V-GeN D4V16GL24A8R 16GB

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Kingston 99U5403-036.A00G 4GB

G Skill Intl F4-3600C16-8GTZR 8GB

G Skill Intl F4-3600C16-8GTZR 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

SK Hynix GKE160SO102408-2400 16GB

SK Hynix GKE160SO102408-2400 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB